机读格式显示(MARC)

• 000 01350nam2 2200361 4500

• 000 1000002182

• 001 0000158641

• 003 CAL

• 005 20040919150630.0

• 008 810112s1981 nyua b 101 0 eng

• 010 __ |a 80028826 //r923

• 020 __ |a 044400596X |c CNY4.40

• 040 __ |a DLC |c XAIT

• 050 00 |a QC611.6.D4 |b D43 1981

• 082 00 |a 537.6/22 |2 19

• 090 __ |a O474-53/1E

• 093 __ |a O474-53 |2 4

• 099 __ |a CAL 022000286792 |a CAL 022000873806

• 245 00 |a Defects in semiconductors : |b proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A. / |c editors, J. Narayan and T. Y. Tan.

• 260 __ |a New York : |b North Holland, |c c1981.

• 300 __ |a xi, 537 p. : |b ill. ; |c 24 cm.

• 490 1_ |a Materials Research Society symposia proceedings ; |v v. 2 |x 0272-9172

• 504 __ |a Includes bibliographical references and indexes.

• 650 _0 |a Semiconductors |x Defects |v Congresses.

• 700 1_ |a Tan, T. Y.

• 700 1_ |a Narayan, J. |q (Jagdish)

• 710 2_ |a Materials Research Society.

• 830 _0 |a Materials Research Society symposia proceedings ; |v v. 2.

• 905 __ |a XATU |d O474-53/1E

• 920 __ |a 261060 |z 1

• 950 __ |a 261060 |f O474-53/1

• 991 __022004002202

• 999 __ |t C |A zhaining |a 20040919 15:05:11 |M zhaining |m 20040919 15:06:30 |G zhaining |g 20040919 15:07:0