机读格式显示(MARC)

• 000 01424nam2 2200433 4500

• 000 1000006530

• 001 0000162879

• 003 CAL

• 005 20050120152158.0

• 008 710513m19711972nyua b 00010 eng

• 010 __ |a 77023589 //r903

• 020 __ |a 0306671069 (v. 2 : v. 6) |c CNY1.70

• 020 __ |a 0306671034 (v. 1 : v. 3)

• 040 __ |a XAIT |a DLC |c DLC |d DLC |d ICU

• 050 00 |a TK7871.15.S558 |b M55 1971

• 082 00 |a 621.381/7

• 090 __ |a TN04/E2:6(2)

• 093 __ |a TN04 |2 4

• 099 __ |a CAL 022000377880

• 100 1_ |a Milek, John T. |q (John Theophil), |d 1915-

• 245 10 |a Silicon nitride for microelectronic applications / |c [by] John T. Milek.

• 260 __ |a New York : |b IFI/Plenum, |c 1971-72.

• 300 __ |a 2 v. (118, 117 p.) |b ill. ; |c 28 cm.

• 490 1_ |a Handbook of electronic materials ; |v v. 3, 6

• 504 __ |a Includes bibliographies.

• 505 0_ |a pt. 1. Preparation and properties -- pt. 2. Applications and devices.

• 650 _0 |a Microelectronics |x Materials.

• 650 _0 |a Silicon nitride.

• 830 _0 |a Handbook of electronic materials ; |v v. 3, etc.

• 905 __ |a XATU |d TN04/E2:6(2)

• 920 __ |a 213060 |z 1

• 920 __ |a 261020 |z 2

• 920 __ |a 243040 |z 1

• 920 __ |a 242010 |z 1

• 920 __ |a 215010 |z 1

• 950 __ |a 261060 |f TN04/E2:6(2)

• 991 __022005002530

• 998 __ |a WUL

• 999 __ |t C |A shenxiaoyan |a 20050120 15:15:31 |M shenxiaoyan |m 20050120 15:21:58 |G shenxiaoyan |g 20050120 15:22:1