机读格式显示(MARC)

• 000 01407nam2 2200385 4500

• 000 1000001644

• 001 0000158139

• 003 CAL

• 005 20040706110811.0

• 008 781019s1978 a b 001 d

• 020 __ |a 0306109441 |c CNY278.85

• 035 __ |a 00025554

• 040 __ |c XAIT |a XAIT

• 050 00 |a QC1

• 050 00 |a QC611

• 082 00 |a 530/.08 s

• 082 00 |a 537.6/22

• 090 __ |a O472-53/3:89E

• 093 __ |a O472-53 |2 4

• 099 __ |a CAL 022000822952

• 240 3_ |a 鮁lektricheskie i opticheskie svo鮥stva poluprovodnikov A[superscript III] B[superscript V]. English

• 245 1_ |a Electrical and optical properties of III-V semiconductors |c edited by N. G. Basov ; translated from Russian by Albin Tybulewicz.

• 260 __ |a New York |b Consultants Bureau |c c1978.

• 300 __ |a viii, 118 p. |b ill. |c 27 cm.

• 440 _0 |a Proceedings (Trudy) of the P. N. Lebedev Physics Institute ; v. 89

• 500 __ |a Translation of 鮁lektricheskie i opticheskie svo鮥stva poluprovodnikov A[superscript III] B[superscript V].

• 650 _0 |a Gallium arsenide semiconductors.

• 650 _0 |a Indium antimonide crystals.

• 650 _0 |a Semiconductors.

• 700 1_ |a Basov, N. G. |d 1922-

• 905 __ |a XATU |d O472-53/3:89E

• 920 __ |a 261060 |z 1

• 950 __ |a 261060 |f O472-53/3:89

• 991 __022004001652

• 999 __ |t C |A shenxiaoyan |a 20040706 11:06:55 |M shenxiaoyan |m 20040706 11:08:11 |G shenxiaoyan |g 20040706 11:08:2