机读格式显示(MARC)

• 000 01415nam2 2200385 4500

• 000 1000001673

• 001 0000158167

• 003 CAL

• 005 20040706152400.0

• 008 880607s1988 paua b 10100 eng d

• 010 __ |a 88013002 //r89

• 020 __ |a 0931837960 |c CNY218.07

• 040 __ |a XAIT |c XAIT

• 050 0_ |a TA1750 |b .A38 1988

• 082 00 |a 621.38/0414 |2 19

• 090 __ |a TN29-53/1:88E

• 093 __ |a TN29-53 |2 4

• 099 __ |a CAL 022000897138

• 245 00 |a Advanced surface processes for optoelectronics : |b symposium held April 5-8, 1988, Reno, Nevada, U.S.A. / |c editors, S.L. Bernasek, T. Venkatesan, H. Temkin.

• 260 __ |a Pittsburgh, Pa. : |b Materials Research Society, |c c1988.

• 300 __ |a ix, 318 p. : |b ill. ; |c 24 cm.

• 490 1_ |a Materials Research Society symposium proceedings, |x 0272-9172 ; |v 126

• 504 __ |a Includes bibliographies and indexes.

• 650 _0 |a Gallium arsenide semiconductors |x Congresses.

• 650 _0 |a Optoelectronic devices |x Congresses.

• 700 1_ |a Venkatesan, T.

• 700 1_ |a Temkin, H.

• 700 1_ |a Bernasek, S. L. |q (Steven L.)

• 710 2_ |a Materials Research Society.

• 830 _0 |a Materials Research Society symposia proceedings ; |v v. 126.

• 905 __ |a XATU |d TN29-53/1:88E

• 920 __ |a 261060 |z 1

• 950 __ |a 261060 |f TN29-53/1:88

• 991 __022004001680

• 999 __ |t C |A shanzhan |a 20040706 15:21:16 |M shanzhan |m 20040706 15:24:00 |G shanzhan |g 20040706 15:24:5