机读格式显示(MARC)

• 000 01456nam2 2200493 4500

• 000 1000005931

• 001 0000162291

• 003 CAL

• 005 20050118112836.0

• 008 811002s1983 maua b 00110 eng

• 010 __ |a 81015035 //r85

• 020 __ |a 0201053233 (pbk.) (v. 4) |c CNY0.80

• 040 __ |c WUL

• 050 0_ |a TK7871.95 |b .P53 1983

• 082 0_ |a 621.3815/284 |2 19

• 090 __ |a TN322/E1:6

• 093 __ |a TN322 |2 3rd

• 099 __ |a CAL 022000310339 |a CAL 022000384228

• 100 1_ |a Pierret, Robert F.

• 245 10 |a Field effect devices / |c Robert F. Pierret.

• 260 __ |a Reading, MA : |b Addison-Wesley, |c c1983.

• 300 __ |a x, 116 p. : |b ill. ; |c 24 cm.

• 440 _0 |a Modular series on solid state devices ; |v v. 4

• 500 __ |a "EE-305."

• 504 __ |a Includes bibliography (p. 107) and index.

• 650 _0 |a Metal oxide semiconductors.

• 650 _0 |a Field-effect transistors.

• 650 _0 |a Metal oxide semiconductor field-effect transistors.

• 905 __ |a XATU |d TN322/E1:6

• 920 __ |a 231030 |b TN386 |c P623F |z 1

• 920 __ |a 231220 |z 1

• 920 __ |a 251050 |z 1

• 920 __ |a 244050 |z 2

• 920 __ |a 242120 |z 1

• 920 __ |a 211060 |z 1

• 920 __ |a 215010 |z 1

• 920 __ |a 261020 |z 2

• 920 __ |a 211130 |z 1

• 920 __ |a 242010 |z 1

• 920 __ |a 251030 |z 1

• 950 __ |a 261060 |f TN322/E1:6

• 991 __022005001930

• 998 __ |a WUL

• 999 __ |t C |A zhouwei |a 20050118 11:28:01 |I zhouwei |i 20050118 11:28:36 |G zhouwei |g 20050118 11:28:5