机读格式显示(MARC)

• 000 01408nam2 2200313 4500

• 000 1000002179

• 001 0000158638

• 005 20040919150353.0

• 008 820203s1981 enka b 101 0 eng d

• 020 __ |a 0854981500 |c CNY4.60

• 040 __ |a GZM |c XAIT

• 090 __ |a O472-53/1:(80)E

• 093 __ |a O472-53 |2 4

• 099 __ |a CAL 022001371289

• 111 2_ |a International Conference on Defects and Radiation Effects in Semiconductors |d (1980 : |c Oiso, Japan)

• 245 10 |a Defects and radiation effects in semiconductors, 1980 : |b invited and contributed papers from the eleventh International Conference on Defects and Radiation Effects in Semiconductors held in Oiso, Japan, 8-11 September 1980 / |c edited by R.R. Hasiguti.

• 260 __ |a Bristol : |b Institute of Physics, |c 1981.

• 300 __ |a xiv, 571 p. : |b ill. ; |c 24 cm.

• 490 1_ |a Conference series / Institute of Physics ; |v no. 59

• 504 __ |a Includes bibliographical references and index.

• 650 _0 |a Semiconductors |x Effect of radiation on. |v Congresses.

• 650 _0 |a Semiconductors |x Defects. |v Congresses.

• 700 1_ |a Hasiguti, Ryukiti R., |d 1914-

• 830 _0 |a Conference series (Institute of Physics (Great Britain)) ; |v no. 59.

• 905 __ |a XATU |d O472-53/1:(80)E

• 920 __ |a 261060 |z 1

• 950 __ |a 261060 |f O472-53/1:(80)

• 991 __022004002199

• 999 __ |t C |A zhaining |a 20040919 15:00:20 |M zhaining |m 20040919 15:03:53 |G zhaining |g 20040919 15:04:3