机读格式显示(MARC)

• 000 01190nam2 2200409 4500

• 000 1000006318

• 001 0000162669

• 003 CAL

• 005 20050119162050.0

• 008 981216s1982 nyua b 10100 eng

• 020 __ |a 0125588208 |c CNY3.10

• 040 __ |c SJT

• 050 0_ |a TA1673 |b .L34 1982

• 082 0_ |a 621.3815/2 |2 19

• 090 __ |a TN248.4/E1

• 093 __ |a TN248.4 |2 3

• 099 __ |a CAL 022000330850

• 245 00 |a Laser annealing of semiconductors / |c edited by J.M. Poate, James W. Mayer.

• 260 __ |a New York : |b Academic Press, |c 1982.

• 300 __ |a xi, 564 p. |b ill. ; |c 24 cm.

• 504 __ |a Includes bibliographies and index.

• 650 _0 |a Semiconductors.

• 650 _0 |a Semiconductor industry |x Laser use in |x Congresses.

• 700 10 |a Mayer, James W., |d 1930-

• 700 10 |a Poate, J.M.

• 905 __ |a XATU |d TN248.4/E1

• 920 __ |a 244050 |z 2

• 920 __ |a 242120 |z 1

• 920 __ |a 215010 |z 1

• 920 __ |a 211070 |z 1

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• 920 __ |a 231030 |b TN304 |c L343L |z 1

• 920 __ |a 251050 |z 1

• 950 __ |a 261060 |f TN248.4/E1

• 991 __022005002318

• 998 __ |a SJT

• 999 __ |t C |A zhouwei |a 20050119 16:20:17 |I zhouwei |i 20050119 16:20:50 |G zhouwei |g 20050119 16:21:1