机读格式显示(MARC)

• 000 01038nam2 2200337 4500

• 000 1000002165

• 001 0000158625

• 003 CAL

• 005 20040919143928.0

• 008 810505s1982 nyua b 00110 eng

• 010 __ |a 81007607

• 020 __ |a 0471085006 |c CNY5.60

• 040 __ |a XAIT |c XAIT

• 050 00 |a TK7871.99.M44 |b N52 1982

• 082 00 |a 621.3815/2 |2 19

• 090 __ |a O47/3E

• 093 __ |a O47 |2 4

• 099 __ |a CAL 022000274403

• 100 1_ |a Nicollian, E. H.

• 245 10 |a MOS (metal oxide semiconductor) physics and technology / |c E.H. Nicollian, J.R. Brews.

• 260 __ |a New York : |b Wiley, |c c1982.

• 300 __ |a xv, 906 p. : |b ill. ; |c 25 cm.

• 500 __ |a "A Wiley-Interscience publication."

• 504 __ |a Includes bibliographical references and indexes.

• 650 _0 |a Metal oxide semiconductors.

• 700 1_ |a Brews, J. R.

• 905 __ |a XATU |d O47/3E

• 920 __ |a 261060 |z 1

• 950 __ |a 261060 |f O47/3

• 991 __022004002185

• 999 __ |t C |A zhaining |a 20040919 14:38:07 |M zhaining |m 20040919 14:39:28 |G zhaining |g 20040919 14:40:0